IISc. scientists create hybrid transistor device
In a first, scientists at the Indian Institute of Science (IISc.) have combined two different types of transistors — MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) and tunnel FETs (Field Effect Transistor) — into a single device that can easily switch between power efficient and high performance modes, depending on the need. The device has … Continue reading IISc. scientists create hybrid transistor device
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